SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the ch...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SONG WOO-BIN, PARK HEUNG-KYU, KIM YOUNG-PIL, LEE BYEONGAN, LEE SUN-GHIL, KIM NAM-KYU, JUNG SU-JIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!