PLASMA PROCESSING METHOD
In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | MATSUMOTO TSUYOSHI INOUE YOSHIHARU YAKUSHIJI MAMORU MIYAJI MASAKAZU ONO TETSUO KANEKIYO TADAMITSU MORIMOTO MICHIKAZU |
description | In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013001197A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013001197A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013001197A13</originalsourceid><addsrcrecordid>eNrjZJAI8HEM9nVUCAjyd3YNDvb0c1fwdQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobGBgaGhpbmjobGxKkCAHXLIJ8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA PROCESSING METHOD</title><source>esp@cenet</source><creator>MATSUMOTO TSUYOSHI ; INOUE YOSHIHARU ; YAKUSHIJI MAMORU ; MIYAJI MASAKAZU ; ONO TETSUO ; KANEKIYO TADAMITSU ; MORIMOTO MICHIKAZU</creator><creatorcontrib>MATSUMOTO TSUYOSHI ; INOUE YOSHIHARU ; YAKUSHIJI MAMORU ; MIYAJI MASAKAZU ; ONO TETSUO ; KANEKIYO TADAMITSU ; MORIMOTO MICHIKAZU</creatorcontrib><description>In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130103&DB=EPODOC&CC=US&NR=2013001197A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130103&DB=EPODOC&CC=US&NR=2013001197A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUMOTO TSUYOSHI</creatorcontrib><creatorcontrib>INOUE YOSHIHARU</creatorcontrib><creatorcontrib>YAKUSHIJI MAMORU</creatorcontrib><creatorcontrib>MIYAJI MASAKAZU</creatorcontrib><creatorcontrib>ONO TETSUO</creatorcontrib><creatorcontrib>KANEKIYO TADAMITSU</creatorcontrib><creatorcontrib>MORIMOTO MICHIKAZU</creatorcontrib><title>PLASMA PROCESSING METHOD</title><description>In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAI8HEM9nVUCAjyd3YNDvb0c1fwdQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobGBgaGhpbmjobGxKkCAHXLIJ8</recordid><startdate>20130103</startdate><enddate>20130103</enddate><creator>MATSUMOTO TSUYOSHI</creator><creator>INOUE YOSHIHARU</creator><creator>YAKUSHIJI MAMORU</creator><creator>MIYAJI MASAKAZU</creator><creator>ONO TETSUO</creator><creator>KANEKIYO TADAMITSU</creator><creator>MORIMOTO MICHIKAZU</creator><scope>EVB</scope></search><sort><creationdate>20130103</creationdate><title>PLASMA PROCESSING METHOD</title><author>MATSUMOTO TSUYOSHI ; INOUE YOSHIHARU ; YAKUSHIJI MAMORU ; MIYAJI MASAKAZU ; ONO TETSUO ; KANEKIYO TADAMITSU ; MORIMOTO MICHIKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013001197A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUMOTO TSUYOSHI</creatorcontrib><creatorcontrib>INOUE YOSHIHARU</creatorcontrib><creatorcontrib>YAKUSHIJI MAMORU</creatorcontrib><creatorcontrib>MIYAJI MASAKAZU</creatorcontrib><creatorcontrib>ONO TETSUO</creatorcontrib><creatorcontrib>KANEKIYO TADAMITSU</creatorcontrib><creatorcontrib>MORIMOTO MICHIKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUMOTO TSUYOSHI</au><au>INOUE YOSHIHARU</au><au>YAKUSHIJI MAMORU</au><au>MIYAJI MASAKAZU</au><au>ONO TETSUO</au><au>KANEKIYO TADAMITSU</au><au>MORIMOTO MICHIKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA PROCESSING METHOD</title><date>2013-01-03</date><risdate>2013</risdate><abstract>In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2013001197A1 |
source | esp@cenet |
subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
title | PLASMA PROCESSING METHOD |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T03%3A25%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MATSUMOTO%20TSUYOSHI&rft.date=2013-01-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2013001197A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |