METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE

Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediate...

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Bibliographische Detailangaben
Hauptverfasser: STAMPER ANTHONY KENDALL, VANSLETTE DANIEL SCOTT, MAXSON JEFFERY BURTON, FAYAZ MOHAMMED FAZIL
Format: Patent
Sprache:eng
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Zusammenfassung:Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.