THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING

A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and...

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Hauptverfasser: KIM BO SUNG, CHOI TAE-YOUNG, LEE DOOHYOUNG, JEONG YEONTAEK, JANG SEON-PIL, KIM YOUNGMIN
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creator KIM BO SUNG
CHOI TAE-YOUNG
LEE DOOHYOUNG
JEONG YEONTAEK
JANG SEON-PIL
KIM YOUNGMIN
description A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012326152A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012326152A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012326152A13</originalsourceid><addsrcrecordid>eNqNyrEKwjAQgOEuDqK-w4Grgkmx-9kkJpCkpXcROpUicRIt1PfHDj6A088P37ro2boIxvkA3GEkR9x0QOlCy7I-gHLUeuyhxag9WLy5eAW2GgiDBowKgmbbKGgMBIzJYM2pW9C2WD3G55x3v26KvdFc22Oe3kOep_GeX_kzJJInIUtZibNEUf6nvt_OMkg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING</title><source>esp@cenet</source><creator>KIM BO SUNG ; CHOI TAE-YOUNG ; LEE DOOHYOUNG ; JEONG YEONTAEK ; JANG SEON-PIL ; KIM YOUNGMIN</creator><creatorcontrib>KIM BO SUNG ; CHOI TAE-YOUNG ; LEE DOOHYOUNG ; JEONG YEONTAEK ; JANG SEON-PIL ; KIM YOUNGMIN</creatorcontrib><description>A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121227&amp;DB=EPODOC&amp;CC=US&amp;NR=2012326152A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121227&amp;DB=EPODOC&amp;CC=US&amp;NR=2012326152A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM BO SUNG</creatorcontrib><creatorcontrib>CHOI TAE-YOUNG</creatorcontrib><creatorcontrib>LEE DOOHYOUNG</creatorcontrib><creatorcontrib>JEONG YEONTAEK</creatorcontrib><creatorcontrib>JANG SEON-PIL</creatorcontrib><creatorcontrib>KIM YOUNGMIN</creatorcontrib><title>THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING</title><description>A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEuDqK-w4Grgkmx-9kkJpCkpXcROpUicRIt1PfHDj6A088P37ro2boIxvkA3GEkR9x0QOlCy7I-gHLUeuyhxag9WLy5eAW2GgiDBowKgmbbKGgMBIzJYM2pW9C2WD3G55x3v26KvdFc22Oe3kOep_GeX_kzJJInIUtZibNEUf6nvt_OMkg</recordid><startdate>20121227</startdate><enddate>20121227</enddate><creator>KIM BO SUNG</creator><creator>CHOI TAE-YOUNG</creator><creator>LEE DOOHYOUNG</creator><creator>JEONG YEONTAEK</creator><creator>JANG SEON-PIL</creator><creator>KIM YOUNGMIN</creator><scope>EVB</scope></search><sort><creationdate>20121227</creationdate><title>THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING</title><author>KIM BO SUNG ; CHOI TAE-YOUNG ; LEE DOOHYOUNG ; JEONG YEONTAEK ; JANG SEON-PIL ; KIM YOUNGMIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012326152A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM BO SUNG</creatorcontrib><creatorcontrib>CHOI TAE-YOUNG</creatorcontrib><creatorcontrib>LEE DOOHYOUNG</creatorcontrib><creatorcontrib>JEONG YEONTAEK</creatorcontrib><creatorcontrib>JANG SEON-PIL</creatorcontrib><creatorcontrib>KIM YOUNGMIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM BO SUNG</au><au>CHOI TAE-YOUNG</au><au>LEE DOOHYOUNG</au><au>JEONG YEONTAEK</au><au>JANG SEON-PIL</au><au>KIM YOUNGMIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING</title><date>2012-12-27</date><risdate>2012</risdate><abstract>A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T11%3A22%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20BO%20SUNG&rft.date=2012-12-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012326152A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true