METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCTOR WAFERS

An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is...

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Hauptverfasser: CARTIER EDUARD, DELIGIANNI HARIKLIA, JAMMY RAJARAO, PARUCHURI VAMSI K, BASKER VEERARAGHAVAN S
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creator CARTIER EDUARD
DELIGIANNI HARIKLIA
JAMMY RAJARAO
PARUCHURI VAMSI K
BASKER VEERARAGHAVAN S
description An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012318666A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012318666A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012318666A13</originalsourceid><addsrcrecordid>eNrjZPDxdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAVXH1fnkCD_AB_HEE8_dwV_P4Vgf0-wOqdQH2-FYFdfT2d_P5dQ5xCg4nBHN9egYB4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgaGRsaGFmZuZoaEycKgBsjy7m</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCTOR WAFERS</title><source>esp@cenet</source><creator>CARTIER EDUARD ; DELIGIANNI HARIKLIA ; JAMMY RAJARAO ; PARUCHURI VAMSI K ; BASKER VEERARAGHAVAN S</creator><creatorcontrib>CARTIER EDUARD ; DELIGIANNI HARIKLIA ; JAMMY RAJARAO ; PARUCHURI VAMSI K ; BASKER VEERARAGHAVAN S</creatorcontrib><description>An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.</description><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121220&amp;DB=EPODOC&amp;CC=US&amp;NR=2012318666A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121220&amp;DB=EPODOC&amp;CC=US&amp;NR=2012318666A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CARTIER EDUARD</creatorcontrib><creatorcontrib>DELIGIANNI HARIKLIA</creatorcontrib><creatorcontrib>JAMMY RAJARAO</creatorcontrib><creatorcontrib>PARUCHURI VAMSI K</creatorcontrib><creatorcontrib>BASKER VEERARAGHAVAN S</creatorcontrib><title>METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCTOR WAFERS</title><description>An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDxdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAVXH1fnkCD_AB_HEE8_dwV_P4Vgf0-wOqdQH2-FYFdfT2d_P5dQ5xCg4nBHN9egYB4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEh8abGRgaGRsaGFmZuZoaEycKgBsjy7m</recordid><startdate>20121220</startdate><enddate>20121220</enddate><creator>CARTIER EDUARD</creator><creator>DELIGIANNI HARIKLIA</creator><creator>JAMMY RAJARAO</creator><creator>PARUCHURI VAMSI K</creator><creator>BASKER VEERARAGHAVAN S</creator><scope>EVB</scope></search><sort><creationdate>20121220</creationdate><title>METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCTOR WAFERS</title><author>CARTIER EDUARD ; DELIGIANNI HARIKLIA ; JAMMY RAJARAO ; PARUCHURI VAMSI K ; BASKER VEERARAGHAVAN S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012318666A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CARTIER EDUARD</creatorcontrib><creatorcontrib>DELIGIANNI HARIKLIA</creatorcontrib><creatorcontrib>JAMMY RAJARAO</creatorcontrib><creatorcontrib>PARUCHURI VAMSI K</creatorcontrib><creatorcontrib>BASKER VEERARAGHAVAN S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CARTIER EDUARD</au><au>DELIGIANNI HARIKLIA</au><au>JAMMY RAJARAO</au><au>PARUCHURI VAMSI K</au><au>BASKER VEERARAGHAVAN S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCTOR WAFERS</title><date>2012-12-20</date><risdate>2012</risdate><abstract>An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
title METHOD AND APPARATUS FOR ELECTROPLATING ON SOI AND BULK SEMICONDUCTOR WAFERS
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