SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device comprising a silicon substrate, a gate structure and a heteroatom-containing epitaxial structure is provided. The gate structure is disposed on a surface of the silicon substrate. The heteroatom-containing epitaxial structure is disposed adjacent to the gate structure and has...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HUANG SHINUAN WANG IANG HWANG GUANG-YAW HUNG YU-HSIANG WANG HSIANG-YING |
| description | A semiconductor device comprising a silicon substrate, a gate structure and a heteroatom-containing epitaxial structure is provided. The gate structure is disposed on a surface of the silicon substrate. The heteroatom-containing epitaxial structure is disposed adjacent to the gate structure and has a major portion and an extension portion, wherein the major portion virtual vertically extends downwards into the silicon substrate from the surface; and the extension portion further extends downwards into the silicon substrate with a tapered cross-section continuing with the major portion. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012299058A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012299058A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012299058A13</originalsourceid><addsrcrecordid>eNrjZLAIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADiro5OgV5OjuGePq5K4R4uCoEO_q68jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDIyNLSwNTC0dDY-JUAQDrUSkq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME</title><source>esp@cenet</source><creator>HUANG SHINUAN ; WANG IANG ; HWANG GUANG-YAW ; HUNG YU-HSIANG ; WANG HSIANG-YING</creator><creatorcontrib>HUANG SHINUAN ; WANG IANG ; HWANG GUANG-YAW ; HUNG YU-HSIANG ; WANG HSIANG-YING</creatorcontrib><description>A semiconductor device comprising a silicon substrate, a gate structure and a heteroatom-containing epitaxial structure is provided. The gate structure is disposed on a surface of the silicon substrate. The heteroatom-containing epitaxial structure is disposed adjacent to the gate structure and has a major portion and an extension portion, wherein the major portion virtual vertically extends downwards into the silicon substrate from the surface; and the extension portion further extends downwards into the silicon substrate with a tapered cross-section continuing with the major portion.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121129&DB=EPODOC&CC=US&NR=2012299058A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121129&DB=EPODOC&CC=US&NR=2012299058A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG SHINUAN</creatorcontrib><creatorcontrib>WANG IANG</creatorcontrib><creatorcontrib>HWANG GUANG-YAW</creatorcontrib><creatorcontrib>HUNG YU-HSIANG</creatorcontrib><creatorcontrib>WANG HSIANG-YING</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME</title><description>A semiconductor device comprising a silicon substrate, a gate structure and a heteroatom-containing epitaxial structure is provided. The gate structure is disposed on a surface of the silicon substrate. The heteroatom-containing epitaxial structure is disposed adjacent to the gate structure and has a major portion and an extension portion, wherein the major portion virtual vertically extends downwards into the silicon substrate from the surface; and the extension portion further extends downwards into the silicon substrate with a tapered cross-section continuing with the major portion.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAIdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADiro5OgV5OjuGePq5K4R4uCoEO_q68jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDIyNLSwNTC0dDY-JUAQDrUSkq</recordid><startdate>20121129</startdate><enddate>20121129</enddate><creator>HUANG SHINUAN</creator><creator>WANG IANG</creator><creator>HWANG GUANG-YAW</creator><creator>HUNG YU-HSIANG</creator><creator>WANG HSIANG-YING</creator><scope>EVB</scope></search><sort><creationdate>20121129</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME</title><author>HUANG SHINUAN ; WANG IANG ; HWANG GUANG-YAW ; HUNG YU-HSIANG ; WANG HSIANG-YING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012299058A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HUANG SHINUAN</creatorcontrib><creatorcontrib>WANG IANG</creatorcontrib><creatorcontrib>HWANG GUANG-YAW</creatorcontrib><creatorcontrib>HUNG YU-HSIANG</creatorcontrib><creatorcontrib>WANG HSIANG-YING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG SHINUAN</au><au>WANG IANG</au><au>HWANG GUANG-YAW</au><au>HUNG YU-HSIANG</au><au>WANG HSIANG-YING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME</title><date>2012-11-29</date><risdate>2012</risdate><abstract>A semiconductor device comprising a silicon substrate, a gate structure and a heteroatom-containing epitaxial structure is provided. The gate structure is disposed on a surface of the silicon substrate. The heteroatom-containing epitaxial structure is disposed adjacent to the gate structure and has a major portion and an extension portion, wherein the major portion virtual vertically extends downwards into the silicon substrate from the surface; and the extension portion further extends downwards into the silicon substrate with a tapered cross-section continuing with the major portion.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2012299058A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T07%3A13%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HUANG%20SHINUAN&rft.date=2012-11-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012299058A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |