METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT GATE NON-VOLATILE MEMORY CELL

A semiconductor device comprises a semiconductor substrate and a select gate structure over a first portion of the semiconductor substrate. The select gate structure comprises a sidewall forming a corner with a second portion of the semiconductor substrate and a charge storage stack over an area com...

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Hauptverfasser:	WINSTEAD BRIAN A, HONG CHEONG M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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