THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

Three dimensional semiconductor memory devices and methods of fabricating the same are provided. According to the method, sacrificial layers and insulating layers are alternately and repeatedly stacked on a substrate, and a cutting region penetrating an uppermost sacrificial layer of the sacrificial...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM KYUNGHYUN, EOM DAEHONG, HWANG KIHYUN, LEE SEONGSOO, KIM JINGYUN, YANG JUN-YOUL, CHA SE-HO, JANG DAEHYUN, YEO CHADONG, LEE SUNGHAE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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