ENGINEERED OXYGEN PROFILE IN METAL GATE ELECTRODE AND NITRIDED HIGH-K GATE DIELECTRICS STRUCTURE FOR HIGH PERFORMANCE PMOS DEVICES

A PMOS transistor is disclosed which includes a nitrogen containing barrier to oxygen diffusion between a gate dielectric layer and a metal gate in the PMOS transistor, in combination with a low oxygen region of the metal gate in direct contact with the nitrogen containing barrier and an oxygen rich...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NIIMI HIROAKI, WEN HUANGUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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