INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MEINEL WALTER BAKER, GOODLIN BRIAN E, JACKSON RICKY ALAN, LAZAROV KALIN VALERIEV
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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