INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER

INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing lay...

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Hauptverfasser: MEINEL WALTER BAKER, GOODLIN BRIAN E, JACKSON RICKY ALAN, LAZAROV KALIN VALERIEV
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MEINEL WALTER BAKER
GOODLIN BRIAN E
JACKSON RICKY ALAN
LAZAROV KALIN VALERIEV
description A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012223400A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012223400A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012223400A13</originalsourceid><addsrcrecordid>eNrjZPDy9HMLcgxydVEIdvUL9g9ScHEN9nT3UwgN9vRzV3D0U3AN8I-IVHDz9PFVcAwGCcA1ODoB1QeEePr7Kfg4RroG8TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDIyMjYxMDA0dDY-JUAQD3bS4C</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER</title><source>esp@cenet</source><creator>MEINEL WALTER BAKER ; GOODLIN BRIAN E ; JACKSON RICKY ALAN ; LAZAROV KALIN VALERIEV</creator><creatorcontrib>MEINEL WALTER BAKER ; GOODLIN BRIAN E ; JACKSON RICKY ALAN ; LAZAROV KALIN VALERIEV</creatorcontrib><description>A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120906&amp;DB=EPODOC&amp;CC=US&amp;NR=2012223400A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120906&amp;DB=EPODOC&amp;CC=US&amp;NR=2012223400A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MEINEL WALTER BAKER</creatorcontrib><creatorcontrib>GOODLIN BRIAN E</creatorcontrib><creatorcontrib>JACKSON RICKY ALAN</creatorcontrib><creatorcontrib>LAZAROV KALIN VALERIEV</creatorcontrib><title>INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER</title><description>A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDy9HMLcgxydVEIdvUL9g9ScHEN9nT3UwgN9vRzV3D0U3AN8I-IVHDz9PFVcAwGCcA1ODoB1QeEePr7Kfg4RroG8TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDIyMjYxMDA0dDY-JUAQD3bS4C</recordid><startdate>20120906</startdate><enddate>20120906</enddate><creator>MEINEL WALTER BAKER</creator><creator>GOODLIN BRIAN E</creator><creator>JACKSON RICKY ALAN</creator><creator>LAZAROV KALIN VALERIEV</creator><scope>EVB</scope></search><sort><creationdate>20120906</creationdate><title>INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER</title><author>MEINEL WALTER BAKER ; GOODLIN BRIAN E ; JACKSON RICKY ALAN ; LAZAROV KALIN VALERIEV</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012223400A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MEINEL WALTER BAKER</creatorcontrib><creatorcontrib>GOODLIN BRIAN E</creatorcontrib><creatorcontrib>JACKSON RICKY ALAN</creatorcontrib><creatorcontrib>LAZAROV KALIN VALERIEV</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MEINEL WALTER BAKER</au><au>GOODLIN BRIAN E</au><au>JACKSON RICKY ALAN</au><au>LAZAROV KALIN VALERIEV</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER</title><date>2012-09-06</date><risdate>2012</risdate><abstract>A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T21%3A59%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MEINEL%20WALTER%20BAKER&rft.date=2012-09-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012223400A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true