PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION

PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION

A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion pro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHENG SIU F, PADHI DEENESH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHENG SIU F
PADHI DEENESH
description A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012208339A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012208339A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012208339A13</originalsourceid><addsrcrecordid>eNrjZHAJcAwO9gxzDPH0c1dw9wl1VfBxjHQNUgjxV_D0DQjyD3NVcPT1Dwrw8A8NVnB2DHLy9wPJ-bqGOPooOLp4uAZ7-vvxMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjA0MjIwMLY2NLR0Nj4lQBABhELMc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION</title><source>esp@cenet</source><creator>CHENG SIU F ; PADHI DEENESH</creator><creatorcontrib>CHENG SIU F ; PADHI DEENESH</creatorcontrib><description>A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120816&amp;DB=EPODOC&amp;CC=US&amp;NR=2012208339A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120816&amp;DB=EPODOC&amp;CC=US&amp;NR=2012208339A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHENG SIU F</creatorcontrib><creatorcontrib>PADHI DEENESH</creatorcontrib><title>PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION</title><description>A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJcAwO9gxzDPH0c1dw9wl1VfBxjHQNUgjxV_D0DQjyD3NVcPT1Dwrw8A8NVnB2DHLy9wPJ-bqGOPooOLp4uAZ7-vvxMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjA0MjIwMLY2NLR0Nj4lQBABhELMc</recordid><startdate>20120816</startdate><enddate>20120816</enddate><creator>CHENG SIU F</creator><creator>PADHI DEENESH</creator><scope>EVB</scope></search><sort><creationdate>20120816</creationdate><title>PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION</title><author>CHENG SIU F ; PADHI DEENESH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012208339A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHENG SIU F</creatorcontrib><creatorcontrib>PADHI DEENESH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHENG SIU F</au><au>PADHI DEENESH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION</title><date>2012-08-16</date><risdate>2012</risdate><abstract>A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2012208339A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-16T11%3A48%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHENG%20SIU%20F&rft.date=2012-08-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012208339A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true