METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SILICIDE REGION COMPRISED OF A SILICIDE OF A NICKEL ALLOY

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SILICIDE REGION COMPRISED OF A SILICIDE OF A NICKEL ALLOY

To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over th...

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Hauptverfasser: ICHINOSE KAZUHITO, IMAI YUKARI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ICHINOSE KAZUHITO
IMAI YUKARI
description To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti (titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to forma barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SILICIDE REGION COMPRISED OF A SILICIDE OF A NICKEL ALLOY
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