PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE

Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal con...

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Hauptverfasser:	DONG YANG, DIMITROV DIMITAR V, WANG DEXIN, IVANOV IVAN PETROV, BALAKRISHNAN MURALIKRISHNAN, SUN MING, TIAN WEI, VAITHYANATHAN VENUGOPALAN
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
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creator	DONG YANG DIMITROV DIMITAR V WANG DEXIN IVANOV IVAN PETROV BALAKRISHNAN MURALIKRISHNAN SUN MING TIAN WEI VAITHYANATHAN VENUGOPALAN
description	Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012138884A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012138884A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012138884A13</originalsourceid><addsrcrecordid>eNrjZHAPCPJ3D3L09XV08nFV8HUNcfTx8YxyDPH09wPyfP2DIhWcXX18FMI9QzwUAnwc_RyDPKNcXRSCPX3CXIMUXH1cnUOC_F1ceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhkaGxhYWFiaOhMXGqAMFyLe0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE</title><source>esp@cenet</source><creator>DONG YANG ; DIMITROV DIMITAR V ; WANG DEXIN ; IVANOV IVAN PETROV ; BALAKRISHNAN MURALIKRISHNAN ; SUN MING ; TIAN WEI ; VAITHYANATHAN VENUGOPALAN</creator><creatorcontrib>DONG YANG ; DIMITROV DIMITAR V ; WANG DEXIN ; IVANOV IVAN PETROV ; BALAKRISHNAN MURALIKRISHNAN ; SUN MING ; TIAN WEI ; VAITHYANATHAN VENUGOPALAN</creatorcontrib><description>Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120607&DB=EPODOC&CC=US&NR=2012138884A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120607&DB=EPODOC&CC=US&NR=2012138884A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DONG YANG</creatorcontrib><creatorcontrib>DIMITROV DIMITAR V</creatorcontrib><creatorcontrib>WANG DEXIN</creatorcontrib><creatorcontrib>IVANOV IVAN PETROV</creatorcontrib><creatorcontrib>BALAKRISHNAN MURALIKRISHNAN</creatorcontrib><creatorcontrib>SUN MING</creatorcontrib><creatorcontrib>TIAN WEI</creatorcontrib><creatorcontrib>VAITHYANATHAN VENUGOPALAN</creatorcontrib><title>PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE</title><description>Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAPCPJ3D3L09XV08nFV8HUNcfTx8YxyDPH09wPyfP2DIhWcXX18FMI9QzwUAnwc_RyDPKNcXRSCPX3CXIMUXH1cnUOC_F1ceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhkaGxhYWFiaOhMXGqAMFyLe0</recordid><startdate>20120607</startdate><enddate>20120607</enddate><creator>DONG YANG</creator><creator>DIMITROV DIMITAR V</creator><creator>WANG DEXIN</creator><creator>IVANOV IVAN PETROV</creator><creator>BALAKRISHNAN MURALIKRISHNAN</creator><creator>SUN MING</creator><creator>TIAN WEI</creator><creator>VAITHYANATHAN VENUGOPALAN</creator><scope>EVB</scope></search><sort><creationdate>20120607</creationdate><title>PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE</title><author>DONG YANG ; DIMITROV DIMITAR V ; WANG DEXIN ; IVANOV IVAN PETROV ; BALAKRISHNAN MURALIKRISHNAN ; SUN MING ; TIAN WEI ; VAITHYANATHAN VENUGOPALAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012138884A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>DONG YANG</creatorcontrib><creatorcontrib>DIMITROV DIMITAR V</creatorcontrib><creatorcontrib>WANG DEXIN</creatorcontrib><creatorcontrib>IVANOV IVAN PETROV</creatorcontrib><creatorcontrib>BALAKRISHNAN MURALIKRISHNAN</creatorcontrib><creatorcontrib>SUN MING</creatorcontrib><creatorcontrib>TIAN WEI</creatorcontrib><creatorcontrib>VAITHYANATHAN VENUGOPALAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DONG YANG</au><au>DIMITROV DIMITAR V</au><au>WANG DEXIN</au><au>IVANOV IVAN PETROV</au><au>BALAKRISHNAN MURALIKRISHNAN</au><au>SUN MING</au><au>TIAN WEI</au><au>VAITHYANATHAN VENUGOPALAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE</title><date>2012-06-07</date><risdate>2012</risdate><abstract>Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.</abstract><oa>free_for_read</oa></addata></record>
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title	PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T11%3A53%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DONG%20YANG&rft.date=2012-06-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012138884A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true