THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR

THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR

A thin film transistor (TFT) and a pixel structure having the TFT are provided. The TFT is configured on a substrate. Besides, the TFT includes a gate, a gate insulation layer, a source, a channel layer, and a drain. The gate insulation layer covers the gate and the substrate. The source is configur...

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Hauptverfasser: WU CHEN-YI, KAO YIHYUN, HUANG CHUN-YAO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WU CHEN-YI
KAO YIHYUN
HUANG CHUN-YAO
description A thin film transistor (TFT) and a pixel structure having the TFT are provided. The TFT is configured on a substrate. Besides, the TFT includes a gate, a gate insulation layer, a source, a channel layer, and a drain. The gate insulation layer covers the gate and the substrate. The source is configured on a portion of the gate insulation layer. The channel layer is configured on the gate insulation layer and covers a portion of the source located above the gate. The drain is configured on and electrically connected to the channel layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012097955A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012097955A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012097955A13</originalsourceid><addsrcrecordid>eNrjZPAI8fD0U3Dz9PFVCAly9Av2DA7xD1Jw9HNRCPCMcPVRCA4JCnUOCQ1yVfBwDPP0c1cI8XBVwKaHh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEhwYbGRgaGViaW5qaOhoaE6cKANs9Lh8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR</title><source>esp@cenet</source><creator>WU CHEN-YI ; KAO YIHYUN ; HUANG CHUN-YAO</creator><creatorcontrib>WU CHEN-YI ; KAO YIHYUN ; HUANG CHUN-YAO</creatorcontrib><description>A thin film transistor (TFT) and a pixel structure having the TFT are provided. The TFT is configured on a substrate. Besides, the TFT includes a gate, a gate insulation layer, a source, a channel layer, and a drain. The gate insulation layer covers the gate and the substrate. The source is configured on a portion of the gate insulation layer. The channel layer is configured on the gate insulation layer and covers a portion of the source located above the gate. The drain is configured on and electrically connected to the channel layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120426&amp;DB=EPODOC&amp;CC=US&amp;NR=2012097955A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120426&amp;DB=EPODOC&amp;CC=US&amp;NR=2012097955A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU CHEN-YI</creatorcontrib><creatorcontrib>KAO YIHYUN</creatorcontrib><creatorcontrib>HUANG CHUN-YAO</creatorcontrib><title>THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR</title><description>A thin film transistor (TFT) and a pixel structure having the TFT are provided. The TFT is configured on a substrate. Besides, the TFT includes a gate, a gate insulation layer, a source, a channel layer, and a drain. The gate insulation layer covers the gate and the substrate. The source is configured on a portion of the gate insulation layer. The channel layer is configured on the gate insulation layer and covers a portion of the source located above the gate. The drain is configured on and electrically connected to the channel layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAI8fD0U3Dz9PFVCAly9Av2DA7xD1Jw9HNRCPCMcPVRCA4JCnUOCQ1yVfBwDPP0c1cI8XBVwKaHh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEhwYbGRgaGViaW5qaOhoaE6cKANs9Lh8</recordid><startdate>20120426</startdate><enddate>20120426</enddate><creator>WU CHEN-YI</creator><creator>KAO YIHYUN</creator><creator>HUANG CHUN-YAO</creator><scope>EVB</scope></search><sort><creationdate>20120426</creationdate><title>THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR</title><author>WU CHEN-YI ; KAO YIHYUN ; HUANG CHUN-YAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012097955A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WU CHEN-YI</creatorcontrib><creatorcontrib>KAO YIHYUN</creatorcontrib><creatorcontrib>HUANG CHUN-YAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WU CHEN-YI</au><au>KAO YIHYUN</au><au>HUANG CHUN-YAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR</title><date>2012-04-26</date><risdate>2012</risdate><abstract>A thin film transistor (TFT) and a pixel structure having the TFT are provided. The TFT is configured on a substrate. Besides, the TFT includes a gate, a gate insulation layer, a source, a channel layer, and a drain. The gate insulation layer covers the gate and the substrate. The source is configured on a portion of the gate insulation layer. The channel layer is configured on the gate insulation layer and covers a portion of the source located above the gate. The drain is configured on and electrically connected to the channel layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THIN FILM TRANSISTOR AND PIXEL STRUCTURE HAVING THE THIN FILM TRANSISTOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T06%3A50%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WU%20CHEN-YI&rft.date=2012-04-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012097955A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true