METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING PRELIMINARY TRENCHES WITH EPITAXIAL GROWTH

A method of fabricating a semiconductor device can be provided by etching sidewalls of a preliminary trench in a substrate that are between immediately adjacent gate electrode structures, to recess the sidewalls further beneath the gate electrode structures to provide recessed sidewalls. Then, the r...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN JEONG-NAM, AHN KEVIN, PARK SANG-JINE, BAEK JAE-JIK, YOON BO-UN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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