METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

A semiconductor device may include lower electrodes having different heights depending on positions on a substrate. Supporting layer pattern making a contact with the lower electrodes having a relatively large height is provided. The supporting layer pattern is provided between the lower electrodes...

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Hauptverfasser: KIM HYUNG-DONG, KWON HYUNG-SHIN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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KWON HYUNG-SHIN
description A semiconductor device may include lower electrodes having different heights depending on positions on a substrate. Supporting layer pattern making a contact with the lower electrodes having a relatively large height is provided. The supporting layer pattern is provided between the lower electrodes for supporting the lower electrodes. A dielectric layer is provided on the lower electrodes and the supporting layer pattern. An upper electrode is formed on the dielectric layer and has a planar upper surface. An inter-metal dielectric layer is provided on the upper electrode. A metal contact penetrating through the inter-metal dielectric layer and making a contact with the upper electrode is formed. A bottom portion of the metal contact faces a portion under where the lower electrode having a relatively small height is formed. The device has a higher reliability.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
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