SEMICONDUCTOR DEVICE

A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ARAI SHINTARO, SINGH NAVAB, BUDDHARAJU KAVITHA DEVI, NAKAMURA HIROKI, NANSHENG SHEN, KUDO TOMOHIKO, SAYANTHAN RUKMANI DEVI, MASUOKA FUJIO
Format: Patent
Sprache:eng
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