METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness su...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOO BON-YOUNG, KIM CHUL-SUNG, JEE JUNG-GEUN, LEAM HUN-HYEOUNG, NOH YOUNG-JIN, LEE WOONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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