COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFCTURING SAME

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFCTURING SAME

A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electr...

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Hauptverfasser: AKIYAMA SHINICHI, KATOU MUTSUMI, FUJISAWA YOICHI, SATO TOSHIYA, ITOU TETSUYA, SATOU YUUICHI, NUKUI KENJI, WATANABE YOSHITAKA, HOSODA TSUTOMU
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator AKIYAMA SHINICHI
KATOU MUTSUMI
FUJISAWA YOICHI
SATO TOSHIYA
ITOU TETSUYA
SATOU YUUICHI
NUKUI KENJI
WATANABE YOSHITAKA
HOSODA TSUTOMU
description A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFCTURING SAME
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