METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION
Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DING PEIJUN |
| description | Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2011220494A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2011220494A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2011220494A13</originalsourceid><addsrcrecordid>eNrjZPD3dQ3x8HcJVnD0c1FwDAhwDHIMCQ1WcPMPUvB1dPdzDQny91MAqnH08fGMcgzxBPJAcsGuvp7O_n4uoc4hQJ6bo1OQpzNYloeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYGhoZGZhYmjgaGhOnCgArfDAL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION</title><source>esp@cenet</source><creator>DING PEIJUN</creator><creatorcontrib>DING PEIJUN</creatorcontrib><description>Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110915&DB=EPODOC&CC=US&NR=2011220494A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110915&DB=EPODOC&CC=US&NR=2011220494A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DING PEIJUN</creatorcontrib><title>METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION</title><description>Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD3dQ3x8HcJVnD0c1FwDAhwDHIMCQ1WcPMPUvB1dPdzDQny91MAqnH08fGMcgzxBPJAcsGuvp7O_n4uoc4hQJ6bo1OQpzNYloeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYGhoZGZhYmjgaGhOnCgArfDAL</recordid><startdate>20110915</startdate><enddate>20110915</enddate><creator>DING PEIJUN</creator><scope>EVB</scope></search><sort><creationdate>20110915</creationdate><title>METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION</title><author>DING PEIJUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2011220494A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DING PEIJUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DING PEIJUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION</title><date>2011-09-15</date><risdate>2011</risdate><abstract>Disclosed is magnetron based metallization processing apparatuses. The apparatus comprises a magnetron which comprises at least one pole piece that is not a permanent magnet at least before the at least one pole piece is assembled in the magnetron assembly. The balance or unbalance ratio of magnetic strength between inner and outer pole pieces may be adjusted by a gap between inner or outer pole pieces and mounting plate. The apparatus may comprise a second magnet assembly that is used to modify the electromagnetic field created by the magnetron assembly for fabricating a semiconductor device. The second magnet assembly comprises electromagnet(s), permanent magnet(s), or ferrous materials. The apparatus may further comprise either DC, pulsed, or RF power supply for charging a sputtering target. The apparatus may comprise a plenum that is used to control the thermal behavior of the sputtering target and is separated from the magnetron assembly.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2011220494A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHODS AND APPARATUS FOR MAGNETRON METALLIZATION FOR SEMICONDUCTOR FABRICATION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T20%3A48%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DING%20PEIJUN&rft.date=2011-09-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2011220494A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |