METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE

Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the diel...

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Hauptverfasser:	SIRAJUDDIN KHALID M, FARR JON C, PAMARTHY SHARMA V, RAORANE DIGVIJAY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	SIRAJUDDIN KHALID M FARR JON C PAMARTHY SHARMA V RAORANE DIGVIJAY
description	Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the dielectric layer conformal with the deep trench exposed, removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process.
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title	METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE
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