LAYERED STRUCTURES COMPRISING SILICON CARBIDE LAYERS, A PROCESS FOR THEIR MANUFACTURE AND THEIR USE

A layered structure comprising in this order: (A) a silicon carbide layer, (B) at least one stratum (b1) located at least one major surface of the silicon carbide layer (A), (b2) chemically bonded to the bulk of the silicon carbide layer (A) by silicon-oxygen and/or silicon-carbon bonds, (b3) coveri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TRAUT ALEXANDER, SHIH CHIEN HSUEH STEVE, WAGNER NORBERT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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