APPARATUS AND METHOD FOR EXTENDED NITRIDE LAYER IN A FLASH MEMORY

A method and apparatus for storing information is provided. A core region of memory includes a semiconductor layer, at least one shallow trench, an insulator, and a charge-trapping layer. The semiconductor layer includes at least one source/drain region, and the insulator disposed above the source/d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUH YOUSEOK, FANG SHENQING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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