VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR

[Summary] [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the su...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKAHASHI YUZURU, ISO KENJI, ISHIHAMA YOSHIYASU, TAKAKI RYOHEI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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