LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT s...
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| creator | NAGAI MASAHARU OHNUMA HIDETO |
| description | The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m L+S (6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m 1). |
| format | Patent |
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A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m L+S (6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m 1).</description><language>eng</language><subject>ACCESSORIES THEREFOR ; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES ; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; PHOTOGRAPHY ; PHYSICS</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110714&DB=EPODOC&CC=US&NR=2011170084A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110714&DB=EPODOC&CC=US&NR=2011170084A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAGAI MASAHARU</creatorcontrib><creatorcontrib>OHNUMA HIDETO</creatorcontrib><title>LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><description>The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m L+S (6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m 1).</description><subject>ACCESSORIES THEREFOR</subject><subject>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</subject><subject>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>PHOTOGRAPHY</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNisEKAiEUAL10iOofHnQOtIL2KvpcpdTQZ3RblrBT1ML2_7RBH9BpYGbmjE6utQR4PcdcEoKX-QgyaPBINmowMU0uFCMVleRCCxm9UzHoomhqGi9OIZT8TWQRsvS4ZLN7_xjr6scFWxskZTd1eHV1HPpbfdZ3V_KWCyEOnDd7KXb_XR_1bDEJ</recordid><startdate>20110714</startdate><enddate>20110714</enddate><creator>NAGAI MASAHARU</creator><creator>OHNUMA HIDETO</creator><scope>EVB</scope></search><sort><creationdate>20110714</creationdate><title>LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><author>NAGAI MASAHARU ; OHNUMA HIDETO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2011170084A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ACCESSORIES THEREFOR</topic><topic>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</topic><topic>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>PHOTOGRAPHY</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>NAGAI MASAHARU</creatorcontrib><creatorcontrib>OHNUMA HIDETO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAGAI MASAHARU</au><au>OHNUMA HIDETO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><date>2011-07-14</date><risdate>2011</risdate><abstract>The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m L+S (6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m 1).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY PHOTOGRAPHY PHYSICS |
| title | LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
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