PROGRAMMING METHODS AND MEMORIES

PROGRAMMING METHODS AND MEMORIES

Methods of programming memory cells, and memories incorporating such methods, are disclosed. In at least one embodiment, programming is accomplished by applying a set of incrementing program pulses to program a selected cell to a first target threshold voltage, and applying a set of incrementing inh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TORSI ALESSANDRO, IMONDI GIULIANO G
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TORSI ALESSANDRO
IMONDI GIULIANO G
description Methods of programming memory cells, and memories incorporating such methods, are disclosed. In at least one embodiment, programming is accomplished by applying a set of incrementing program pulses to program a selected cell to a first target threshold voltage, and applying a set of incrementing inhibit pulses to an unselected cell to fine-tune program of the selected cell to a second threshold voltage.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2011134702A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2011134702A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2011134702A13</originalsourceid><addsrcrecordid>eNrjZFAICPJ3D3L09fX0c1fwdQ3x8HcJVnD0cwGyff2DPF2DeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhoaGxibmBkaOhMXGqAIOgItA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROGRAMMING METHODS AND MEMORIES</title><source>esp@cenet</source><creator>TORSI ALESSANDRO ; IMONDI GIULIANO G</creator><creatorcontrib>TORSI ALESSANDRO ; IMONDI GIULIANO G</creatorcontrib><description>Methods of programming memory cells, and memories incorporating such methods, are disclosed. In at least one embodiment, programming is accomplished by applying a set of incrementing program pulses to program a selected cell to a first target threshold voltage, and applying a set of incrementing inhibit pulses to an unselected cell to fine-tune program of the selected cell to a second threshold voltage.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110609&amp;DB=EPODOC&amp;CC=US&amp;NR=2011134702A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110609&amp;DB=EPODOC&amp;CC=US&amp;NR=2011134702A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TORSI ALESSANDRO</creatorcontrib><creatorcontrib>IMONDI GIULIANO G</creatorcontrib><title>PROGRAMMING METHODS AND MEMORIES</title><description>Methods of programming memory cells, and memories incorporating such methods, are disclosed. In at least one embodiment, programming is accomplished by applying a set of incrementing program pulses to program a selected cell to a first target threshold voltage, and applying a set of incrementing inhibit pulses to an unselected cell to fine-tune program of the selected cell to a second threshold voltage.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAICPJ3D3L09fX0c1fwdQ3x8HcJVnD0cwGyff2DPF2DeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhoaGxibmBkaOhMXGqAIOgItA</recordid><startdate>20110609</startdate><enddate>20110609</enddate><creator>TORSI ALESSANDRO</creator><creator>IMONDI GIULIANO G</creator><scope>EVB</scope></search><sort><creationdate>20110609</creationdate><title>PROGRAMMING METHODS AND MEMORIES</title><author>TORSI ALESSANDRO ; IMONDI GIULIANO G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2011134702A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>TORSI ALESSANDRO</creatorcontrib><creatorcontrib>IMONDI GIULIANO G</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TORSI ALESSANDRO</au><au>IMONDI GIULIANO G</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROGRAMMING METHODS AND MEMORIES</title><date>2011-06-09</date><risdate>2011</risdate><abstract>Methods of programming memory cells, and memories incorporating such methods, are disclosed. In at least one embodiment, programming is accomplished by applying a set of incrementing program pulses to program a selected cell to a first target threshold voltage, and applying a set of incrementing inhibit pulses to an unselected cell to fine-tune program of the selected cell to a second threshold voltage.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2011134702A1
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title PROGRAMMING METHODS AND MEMORIES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T04%3A14%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TORSI%20ALESSANDRO&rft.date=2011-06-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2011134702A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true