MEMORY DEVICE AND SENSE CIRCUITRY THEREFOR

A memory device includes a memory array, sense circuitry coupled to the memory array, and timing circuitry coupled to the sense circuitry. The timing circuitry generates a sense trigger signal to enable the sense circuitry. A strap region is formed adjacent the memory array. A reference word line is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MAITI BIKAS, CHILDS LAWRENCE F, SHARMA ASHISH, RANA MANMOHAN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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