MEMORY DEVICE AND SENSE CIRCUITRY THEREFOR

A memory device includes a memory array, sense circuitry coupled to the memory array, and timing circuitry coupled to the sense circuitry. The timing circuitry generates a sense trigger signal to enable the sense circuitry. A strap region is formed adjacent the memory array. A reference word line is...

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Hauptverfasser:	MAITI BIKAS, CHILDS LAWRENCE F, SHARMA ASHISH, RANA MANMOHAN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	MAITI BIKAS CHILDS LAWRENCE F SHARMA ASHISH RANA MANMOHAN
description	A memory device includes a memory array, sense circuitry coupled to the memory array, and timing circuitry coupled to the sense circuitry. The timing circuitry generates a sense trigger signal to enable the sense circuitry. A strap region is formed adjacent the memory array. A reference word line is coupled to the timing circuitry. The reference word line formed in the strap region.
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subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	MEMORY DEVICE AND SENSE CIRCUITRY THEREFOR
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