SUPER-HIGH DENSITY TRENCH MOSFET

SUPER-HIGH DENSITY TRENCH MOSFET

A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown...

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Hauptverfasser: SHI SHARON, CHEN QUFEI, XU ROBERT Q, LICHTENBERGER KARL, CHEN KUO-IN, TERRILL KYLE
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHI SHARON
CHEN QUFEI
XU ROBERT Q
LICHTENBERGER KARL
CHEN KUO-IN
TERRILL KYLE
description A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate polysilicon can be deposited within the plurality of trenches. Moreover, the method can include chemical mechanical polishing the gate polysilicon. The method can also include etching back the gate polysilicon within the plurality of trenches.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SUPER-HIGH DENSITY TRENCH MOSFET
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