LDMOS TRANSISTOR

An LDMOS transistor (100) on a substrate (70a, 70b) of a first conductivity type, comprises a source region (10) with a source portion (73) and a drain region (12). The source portion and drain region are of a second conductivity type opposite to the first conductivity type and are mutually connecte...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	THEEUWEN STEPHAN J. C. H, PEUSCHER HENK J, VAN DEN HEUVEL RENE, BRON PAUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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