SEMICONDUCTOR DEVICE

A disclosed semiconductor device includes an MOS transistor having an N-type low-concentration drain region, a source region, an ohmic drain region, a P-type channel region, an ohmic channel region, a gate isolation film, and a gate electrode. The N-type low-concentration drain region includes two l...

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Bibliographische Detailangaben
1. Verfasser: NEGORO TAKAAKI
Format: Patent
Sprache:eng
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