MAGNETORESISTIVE MEMORY ELEMENTS WITH SEPARATE READ AND WRITE CURRENT PATHS

A magnetoresistive memory element has a free layer, and a write current path aligned with a free layer plane. The memory element has a pinned layer with a magnetization direction aligned with that of the free layer. A barrier layer is disposed between the free layer and the pinned layer. The free, b...

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Bibliographische Detailangaben

1. Verfasser:	COVINGTON MARK WILLIAM
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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