SEMICONDUCTOR STRUCTURES AND METHODS FOR STABILIZING SILICON-COMPRISING STRUCTURES ON A SILICON OXIDE LAYER OF A SEMICONDUCTOR SUBSTRATE

Methods are provided for substantially preventing and filling overetched regions in a silicon oxide layer of a semiconductor substrate. The overetched regions may be formed as a result of overetching of the silicon oxide layer during etching of an overlying silicon-comprising material layer to form...

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Bibliographische Detailangaben

Hauptverfasser:	JOHNSON FRANK S, KNORR ANDREAS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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