CHARGE RETENTION FOR FLASH MEMORY BY MANIPULATING THE PROGRAM DATA METHODOLOGY

A method, system and apparatus for determining whether any un-programmed cell is affected by charge disturb by comparing the voltage threshold of the un-programmed cells against a reference voltage. If the voltage threshold for the un-programmed cell exceeds the reference voltage, the failed or defe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CH'NG SHEAU-YANG, HOO KIAN-HUAT, ONG MEEOO
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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