CHARGE RETENTION FOR FLASH MEMORY BY MANIPULATING THE PROGRAM DATA METHODOLOGY

CHARGE RETENTION FOR FLASH MEMORY BY MANIPULATING THE PROGRAM DATA METHODOLOGY

A method, system and apparatus for determining whether any un-programmed cell is affected by charge disturb by comparing the voltage threshold of the un-programmed cells against a reference voltage. If the voltage threshold for the un-programmed cell exceeds the reference voltage, the failed or defe...

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Hauptverfasser: CH'NG SHEAU-YANG, HOO KIAN-HUAT, ONG MEEOO
Format: Patent
Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator CH'NG SHEAU-YANG
HOO KIAN-HUAT
ONG MEEOO
description A method, system and apparatus for determining whether any un-programmed cell is affected by charge disturb by comparing the voltage threshold of the un-programmed cells against a reference voltage. If the voltage threshold for the un-programmed cell exceeds the reference voltage, the failed or defective un-programmed cell will be then be programmed. This will change the defective un-programmed cell to a new programmed value. To account for the location of the failing memory cell, address syndrome bits are used to identify the location of the defective memory cell.
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subjects INFORMATION STORAGE
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STATIC STORES
title CHARGE RETENTION FOR FLASH MEMORY BY MANIPULATING THE PROGRAM DATA METHODOLOGY
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