ARRAY OF ALPHA PARTICLE SENSORS

ARRAY OF ALPHA PARTICLE SENSORS

An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the loca...

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Hauptverfasser: SULLIVAN TIMOTHY D, CANNON ETHAN H, HAUSER MICHAEL J
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SULLIVAN TIMOTHY D
CANNON ETHAN H
HAUSER MICHAEL J
description An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2010230772A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2010230772A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2010230772A13</originalsourceid><addsrcrecordid>eNrjZJB3DApyjFTwd1Nw9AnwcFQIcAwK8XT2cVUIdvUL9g8K5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGBkbGBubmRo6GxsSpAgBLJSJl</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ARRAY OF ALPHA PARTICLE SENSORS</title><source>esp@cenet</source><creator>SULLIVAN TIMOTHY D ; CANNON ETHAN H ; HAUSER MICHAEL J</creator><creatorcontrib>SULLIVAN TIMOTHY D ; CANNON ETHAN H ; HAUSER MICHAEL J</creatorcontrib><description>An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100916&amp;DB=EPODOC&amp;CC=US&amp;NR=2010230772A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100916&amp;DB=EPODOC&amp;CC=US&amp;NR=2010230772A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SULLIVAN TIMOTHY D</creatorcontrib><creatorcontrib>CANNON ETHAN H</creatorcontrib><creatorcontrib>HAUSER MICHAEL J</creatorcontrib><title>ARRAY OF ALPHA PARTICLE SENSORS</title><description>An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB3DApyjFTwd1Nw9AnwcFQIcAwK8XT2cVUIdvUL9g8K5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGBkbGBubmRo6GxsSpAgBLJSJl</recordid><startdate>20100916</startdate><enddate>20100916</enddate><creator>SULLIVAN TIMOTHY D</creator><creator>CANNON ETHAN H</creator><creator>HAUSER MICHAEL J</creator><scope>EVB</scope></search><sort><creationdate>20100916</creationdate><title>ARRAY OF ALPHA PARTICLE SENSORS</title><author>SULLIVAN TIMOTHY D ; CANNON ETHAN H ; HAUSER MICHAEL J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010230772A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SULLIVAN TIMOTHY D</creatorcontrib><creatorcontrib>CANNON ETHAN H</creatorcontrib><creatorcontrib>HAUSER MICHAEL J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SULLIVAN TIMOTHY D</au><au>CANNON ETHAN H</au><au>HAUSER MICHAEL J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ARRAY OF ALPHA PARTICLE SENSORS</title><date>2010-09-16</date><risdate>2010</risdate><abstract>An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ARRAY OF ALPHA PARTICLE SENSORS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T21%3A37%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SULLIVAN%20TIMOTHY%20D&rft.date=2010-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2010230772A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true