SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD

HF-originated radicals generated in a plasma-forming chamber are fed to a treatment chamber via feed holes, while HF gas molecules as the treatment gas are supplied to the treatment chamber from near the radical feed holes to suppress the excitation energy, thereby increasing the selectivity to Si t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SEINO TAKUYA, MASHIMO KIMIKO, IKEMOTO MANABU
Format: Patent
Sprache:eng
Schlagworte:
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