Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same

Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same

A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or l...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MATSUZAWA HIRONOBU, CHOU TSUTOMU
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MATSUZAWA HIRONOBU
CHOU TSUTOMU
description A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2010214696A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2010214696A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2010214696A13</originalsourceid><addsrcrecordid>eNqNjMEKgkAURd20iOofHrQO1EJoGZG0aBFUaxnGOzrgjDLvjeDfl-AHtDpwOJx1Yh5qQkBNLCFqiQHUqtH6hko8hXhigSOnGg-xmrq5JuXrRfUBbFnsCIIx0ELo4OCFIs8TaUGsHLbJyqiOsVu4Sfbl7X29HzD0FXhQGr9b9XnlaZbm2ak4F5fs-F_1BbEOQOw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same</title><source>esp@cenet</source><creator>MATSUZAWA HIRONOBU ; CHOU TSUTOMU</creator><creatorcontrib>MATSUZAWA HIRONOBU ; CHOU TSUTOMU</creatorcontrib><description>A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; PHYSICS</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100826&amp;DB=EPODOC&amp;CC=US&amp;NR=2010214696A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100826&amp;DB=EPODOC&amp;CC=US&amp;NR=2010214696A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUZAWA HIRONOBU</creatorcontrib><creatorcontrib>CHOU TSUTOMU</creatorcontrib><title>Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same</title><description>A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMEKgkAURd20iOofHrQO1EJoGZG0aBFUaxnGOzrgjDLvjeDfl-AHtDpwOJx1Yh5qQkBNLCFqiQHUqtH6hko8hXhigSOnGg-xmrq5JuXrRfUBbFnsCIIx0ELo4OCFIs8TaUGsHLbJyqiOsVu4Sfbl7X29HzD0FXhQGr9b9XnlaZbm2ak4F5fs-F_1BbEOQOw</recordid><startdate>20100826</startdate><enddate>20100826</enddate><creator>MATSUZAWA HIRONOBU</creator><creator>CHOU TSUTOMU</creator><scope>EVB</scope></search><sort><creationdate>20100826</creationdate><title>Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same</title><author>MATSUZAWA HIRONOBU ; CHOU TSUTOMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010214696A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUZAWA HIRONOBU</creatorcontrib><creatorcontrib>CHOU TSUTOMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUZAWA HIRONOBU</au><au>CHOU TSUTOMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same</title><date>2010-08-26</date><risdate>2010</risdate><abstract>A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2010214696A1
source esp@cenet
subjects ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
title Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T07%3A42%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MATSUZAWA%20HIRONOBU&rft.date=2010-08-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2010214696A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true