METHOD FOR MANUFACTURING A TRANSISTOR WITH PARALLEL SEMICONDUCTOR NANOFINGERS

METHOD FOR MANUFACTURING A TRANSISTOR WITH PARALLEL SEMICONDUCTOR NANOFINGERS

A method of producing a transistor having parallel semiconductor nanofingers. The method includes: forming a monocrystalline layer of a semiconductor material on a layer of a subjacent material which can be selectively etched in relation to the monocrystalline layer; etching parallel partitions in t...

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Hauptverfasser: BUSTOS JESSY, WACQUEZ ROMAIN, CORONEL PHILIPPE
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BUSTOS JESSY
WACQUEZ ROMAIN
CORONEL PHILIPPE
description A method of producing a transistor having parallel semiconductor nanofingers. The method includes: forming a monocrystalline layer of a semiconductor material on a layer of a subjacent material which can be selectively etched in relation to the monocrystalline layer; etching parallel partitions in the monocrystalline layer and in the subjacent layer and continuing said etching operation in order to hollow out part of the subjacent layer of material; filling the gap between the partitions and the hollowed-out part with a first insulating material; defining a central part of the partitions and removing the first insulating material from around the central part of the monocrystalline layer, thereby forming a finger of semiconductor material; and filling and coating the central part with a conductor material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING A TRANSISTOR WITH PARALLEL SEMICONDUCTOR NANOFINGERS
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