Array Operation Using A Schottky Diode As a Non-Ohmic Isolation Device

A two-terminal memory cell including a Schottky metal-semiconductor contact as a non-ohmic device (NOD) allows selection of two-terminal cross-point memory array operating voltages that eliminate "half-select leakage current" problems present when other types of non-ohmic devices are used....

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Bibliographische Detailangaben

Hauptverfasser:	LAMBERTSON ROY, SCHLOSS LAWRENCE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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