Castellated gate MOSFET tetrode capable of fully-depleted operation

A castellated-gate MOSFET tetrode device capable of fully depleted operation is disclosed. The device includes a semiconductor substrate region having an upper portion with a top surface and a lower portion with a bottom surface. A source region and a drain region are formed in the semiconductor sub...

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Bibliographische Detailangaben

1. Verfasser:	SELISKAR JOHN J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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