METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE
The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the gro...
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| creator | KIYOMI KAZUMASA FUJITO KENJI |
| description | The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE |
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