MEMORY DEVICE AND PROGRAM METHOD THEREOF
Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored...
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creator | CHANG DUCKHYUN JUNG TAESUNG LEE DONGGI MIN SANGLYUL SO BYUNGSE KIM JINHYUK KIM BRYAN SUK JOON |
description | Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2010103735A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2010103735A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2010103735A13</originalsourceid><addsrcrecordid>eNrjZNDwdfX1D4pUcHEN83R2VXD0c1EICPJ3D3L0VfB1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGQGhsbmzqaGhMnCoAiEgk0Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MEMORY DEVICE AND PROGRAM METHOD THEREOF</title><source>esp@cenet</source><creator>CHANG DUCKHYUN ; JUNG TAESUNG ; LEE DONGGI ; MIN SANGLYUL ; SO BYUNGSE ; KIM JINHYUK ; KIM BRYAN SUK JOON</creator><creatorcontrib>CHANG DUCKHYUN ; JUNG TAESUNG ; LEE DONGGI ; MIN SANGLYUL ; SO BYUNGSE ; KIM JINHYUK ; KIM BRYAN SUK JOON</creatorcontrib><description>Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100429&DB=EPODOC&CC=US&NR=2010103735A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100429&DB=EPODOC&CC=US&NR=2010103735A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHANG DUCKHYUN</creatorcontrib><creatorcontrib>JUNG TAESUNG</creatorcontrib><creatorcontrib>LEE DONGGI</creatorcontrib><creatorcontrib>MIN SANGLYUL</creatorcontrib><creatorcontrib>SO BYUNGSE</creatorcontrib><creatorcontrib>KIM JINHYUK</creatorcontrib><creatorcontrib>KIM BRYAN SUK JOON</creatorcontrib><title>MEMORY DEVICE AND PROGRAM METHOD THEREOF</title><description>Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDwdfX1D4pUcHEN83R2VXD0c1EICPJ3D3L0VfB1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGQGhsbmzqaGhMnCoAiEgk0Q</recordid><startdate>20100429</startdate><enddate>20100429</enddate><creator>CHANG DUCKHYUN</creator><creator>JUNG TAESUNG</creator><creator>LEE DONGGI</creator><creator>MIN SANGLYUL</creator><creator>SO BYUNGSE</creator><creator>KIM JINHYUK</creator><creator>KIM BRYAN SUK JOON</creator><scope>EVB</scope></search><sort><creationdate>20100429</creationdate><title>MEMORY DEVICE AND PROGRAM METHOD THEREOF</title><author>CHANG DUCKHYUN ; JUNG TAESUNG ; LEE DONGGI ; MIN SANGLYUL ; SO BYUNGSE ; KIM JINHYUK ; KIM BRYAN SUK JOON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010103735A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHANG DUCKHYUN</creatorcontrib><creatorcontrib>JUNG TAESUNG</creatorcontrib><creatorcontrib>LEE DONGGI</creatorcontrib><creatorcontrib>MIN SANGLYUL</creatorcontrib><creatorcontrib>SO BYUNGSE</creatorcontrib><creatorcontrib>KIM JINHYUK</creatorcontrib><creatorcontrib>KIM BRYAN SUK JOON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHANG DUCKHYUN</au><au>JUNG TAESUNG</au><au>LEE DONGGI</au><au>MIN SANGLYUL</au><au>SO BYUNGSE</au><au>KIM JINHYUK</au><au>KIM BRYAN SUK JOON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEMORY DEVICE AND PROGRAM METHOD THEREOF</title><date>2010-04-29</date><risdate>2010</risdate><abstract>Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | MEMORY DEVICE AND PROGRAM METHOD THEREOF |
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