AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecu...
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| creator | UENO TOMIKAZU MATSUMOTO TAICHI ANDOU MICHIAKI |
| description | A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5. |
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BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100422&DB=EPODOC&CC=US&NR=2010099260A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100422&DB=EPODOC&CC=US&NR=2010099260A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UENO TOMIKAZU</creatorcontrib><creatorcontrib>MATSUMOTO TAICHI</creatorcontrib><creatorcontrib>ANDOU MICHIAKI</creatorcontrib><title>AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE</title><description>A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCh1DAx19Q8NVnDxDA5wDQr29PdTcPMPUnD2cPX1dHb0UfB1dfZw9AMzA_x9PIM9_NwVHP1c8CjwBKrwdQ3x8HcBmxQMUufv5xLqHALkubiGeTq78jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDAwNLSyMzA0dDY-JUAQDJgzoF</recordid><startdate>20100422</startdate><enddate>20100422</enddate><creator>UENO TOMIKAZU</creator><creator>MATSUMOTO TAICHI</creator><creator>ANDOU MICHIAKI</creator><scope>EVB</scope></search><sort><creationdate>20100422</creationdate><title>AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE</title><author>UENO TOMIKAZU ; MATSUMOTO TAICHI ; ANDOU MICHIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010099260A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>UENO TOMIKAZU</creatorcontrib><creatorcontrib>MATSUMOTO TAICHI</creatorcontrib><creatorcontrib>ANDOU MICHIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UENO TOMIKAZU</au><au>MATSUMOTO TAICHI</au><au>ANDOU MICHIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE</title><date>2010-04-22</date><risdate>2010</risdate><abstract>A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES |
| title | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE |
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