PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD
In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper elect...
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creator | FISCHER ANDREAS MORAVEJ MARYAM |
description | In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2010098875A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2010098875A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2010098875A13</originalsourceid><addsrcrecordid>eNrjZLAKCHLVdfZ3DPH0c1dw9HNRCHd0cw3S9XENDlZwDA3x13X2cXX0A0kGRwaHuPqC1fi6hnj4u_AwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQwMDSwsLc1NHQ2PiVAEAPWYpyg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD</title><source>esp@cenet</source><creator>FISCHER ANDREAS ; MORAVEJ MARYAM</creator><creatorcontrib>FISCHER ANDREAS ; MORAVEJ MARYAM</creatorcontrib><description>In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100422&DB=EPODOC&CC=US&NR=2010098875A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100422&DB=EPODOC&CC=US&NR=2010098875A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FISCHER ANDREAS</creatorcontrib><creatorcontrib>MORAVEJ MARYAM</creatorcontrib><title>PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD</title><description>In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKCHLVdfZ3DPH0c1dw9HNRCHd0cw3S9XENDlZwDA3x13X2cXX0A0kGRwaHuPqC1fi6hnj4u_AwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQwMDSwsLc1NHQ2PiVAEAPWYpyg</recordid><startdate>20100422</startdate><enddate>20100422</enddate><creator>FISCHER ANDREAS</creator><creator>MORAVEJ MARYAM</creator><scope>EVB</scope></search><sort><creationdate>20100422</creationdate><title>PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD</title><author>FISCHER ANDREAS ; MORAVEJ MARYAM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010098875A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FISCHER ANDREAS</creatorcontrib><creatorcontrib>MORAVEJ MARYAM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FISCHER ANDREAS</au><au>MORAVEJ MARYAM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD</title><date>2010-04-22</date><risdate>2010</risdate><abstract>In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | PRE-COATING AND WAFER-LESS AUTO-CLEANING SYSTEM AND METHOD |
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