Dielectric mesh isolated phase change structure for phase change memory

A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN CHIEH FANG, BREITWISCH MATTHEW J, FLAITZ PHILIP, LUNG HSIANG-LAN, LEE MING HSIU, BAUMANN FRIEDER H, LAM CHUNG HON, SHIH YEN-HAO, RAOUX SIMONE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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