Power Transistor and Method for Controlling a Power Transistor

Power Transistor and Method for Controlling a Power Transistor

Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transisto...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MIGNOLI FRANCO, CORTIGIANI FABRIZIO, RAGONESI GIANLUCA, SOLDA SILVIA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator MIGNOLI FRANCO
CORTIGIANI FABRIZIO
RAGONESI GIANLUCA
SOLDA SILVIA
description Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2010079190A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2010079190A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2010079190A13</originalsourceid><addsrcrecordid>eNrjZLALyC9PLVIIKUrMK84sLskvUkjMS1HwTS3JyE9RSANynfPzSoryc3Iy89IVEhXQVfMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQwMDc0tDSwNHQ2PiVAEADlgxZg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Power Transistor and Method for Controlling a Power Transistor</title><source>esp@cenet</source><creator>MIGNOLI FRANCO ; CORTIGIANI FABRIZIO ; RAGONESI GIANLUCA ; SOLDA SILVIA</creator><creatorcontrib>MIGNOLI FRANCO ; CORTIGIANI FABRIZIO ; RAGONESI GIANLUCA ; SOLDA SILVIA</creatorcontrib><description>Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; PULSE TECHNIQUE</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100401&amp;DB=EPODOC&amp;CC=US&amp;NR=2010079190A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100401&amp;DB=EPODOC&amp;CC=US&amp;NR=2010079190A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIGNOLI FRANCO</creatorcontrib><creatorcontrib>CORTIGIANI FABRIZIO</creatorcontrib><creatorcontrib>RAGONESI GIANLUCA</creatorcontrib><creatorcontrib>SOLDA SILVIA</creatorcontrib><title>Power Transistor and Method for Controlling a Power Transistor</title><description>Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALyC9PLVIIKUrMK84sLskvUkjMS1HwTS3JyE9RSANynfPzSoryc3Iy89IVEhXQVfMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQwMDc0tDSwNHQ2PiVAEADlgxZg</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>MIGNOLI FRANCO</creator><creator>CORTIGIANI FABRIZIO</creator><creator>RAGONESI GIANLUCA</creator><creator>SOLDA SILVIA</creator><scope>EVB</scope></search><sort><creationdate>20100401</creationdate><title>Power Transistor and Method for Controlling a Power Transistor</title><author>MIGNOLI FRANCO ; CORTIGIANI FABRIZIO ; RAGONESI GIANLUCA ; SOLDA SILVIA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010079190A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>MIGNOLI FRANCO</creatorcontrib><creatorcontrib>CORTIGIANI FABRIZIO</creatorcontrib><creatorcontrib>RAGONESI GIANLUCA</creatorcontrib><creatorcontrib>SOLDA SILVIA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIGNOLI FRANCO</au><au>CORTIGIANI FABRIZIO</au><au>RAGONESI GIANLUCA</au><au>SOLDA SILVIA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power Transistor and Method for Controlling a Power Transistor</title><date>2010-04-01</date><risdate>2010</risdate><abstract>Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2010079190A1
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
title Power Transistor and Method for Controlling a Power Transistor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T06%3A58%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MIGNOLI%20FRANCO&rft.date=2010-04-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2010079190A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true