PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT
A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | CHENG WENNG CHIOU JIAN-BIN WU WEN-SHENG |
description | A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2010051581A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2010051581A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2010051581A13</originalsourceid><addsrcrecordid>eNrjZLAO8HEM9nVUcPZxdfTz9HNXcPMPUggI8nd2DQ5WcPZw9HVyDVJw9vcN8Pdz9QtRCHJ1Cw1y8gz28AXyeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhgYGpoamFoaOhMXGqAImIKkw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT</title><source>esp@cenet</source><creator>CHENG WENNG ; CHIOU JIAN-BIN ; WU WEN-SHENG</creator><creatorcontrib>CHENG WENNG ; CHIOU JIAN-BIN ; WU WEN-SHENG</creatorcontrib><description>A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.</description><language>eng</language><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; SPRAYING OR ATOMISING IN GENERAL ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100304&DB=EPODOC&CC=US&NR=2010051581A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100304&DB=EPODOC&CC=US&NR=2010051581A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHENG WENNG</creatorcontrib><creatorcontrib>CHIOU JIAN-BIN</creatorcontrib><creatorcontrib>WU WEN-SHENG</creatorcontrib><title>PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT</title><description>A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.</description><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAO8HEM9nVUcPZxdfTz9HNXcPMPUggI8nd2DQ5WcPZw9HVyDVJw9vcN8Pdz9QtRCHJ1Cw1y8gz28AXyeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhgYGpoamFoaOhMXGqAImIKkw</recordid><startdate>20100304</startdate><enddate>20100304</enddate><creator>CHENG WENNG</creator><creator>CHIOU JIAN-BIN</creator><creator>WU WEN-SHENG</creator><scope>EVB</scope></search><sort><creationdate>20100304</creationdate><title>PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT</title><author>CHENG WENNG ; CHIOU JIAN-BIN ; WU WEN-SHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2010051581A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CHENG WENNG</creatorcontrib><creatorcontrib>CHIOU JIAN-BIN</creatorcontrib><creatorcontrib>WU WEN-SHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHENG WENNG</au><au>CHIOU JIAN-BIN</au><au>WU WEN-SHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT</title><date>2010-03-04</date><risdate>2010</risdate><abstract>A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2010051581A1 |
source | esp@cenet |
subjects | APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
title | PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T01%3A50%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHENG%20WENNG&rft.date=2010-03-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2010051581A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |