METHOD FOR FORMING A PATTERN

One aspect of the present invention is directed to a method of forming a pattern. A first layer which comprises a polymerization initiator is selectively formed on a second layer of a substrate. A polymer layer is selectively formed on the first layer by subjecting an organic monomer to living radic...

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1. Verfasser: SAKURAI NAOAKI
Format: Patent
Sprache:eng
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Zusammenfassung:One aspect of the present invention is directed to a method of forming a pattern. A first layer which comprises a polymerization initiator is selectively formed on a second layer of a substrate. A polymer layer is selectively formed on the first layer by subjecting an organic monomer to living radical polymerization using the polymerization initiator. The second layer is selectively etched using the polymer layer as a mask.